vs-25tts..fppbf series, vs-25tts..fp-m3 series www.vishay.com vishay semiconductors revision: 26-jul-13 1 document number: 94384 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thyristor high voltage, phase control scr, 25 a features ? designed and qualified for industrial level ? fully isolated package (v ins = 2500 v rms ) ? ul e78996 pending ? 125 c max. operating junction temperature ? material categorization: ? for definitions of compliance please see www.vishay.com/doc?99912 applications ? typical usage is in input rectification crowbar (soft start) and ac switch in motor contro l, ups, welding, and battery charge description the vs-25tts...fp... high voltage series of silicon controlled rectifiers are specif ically designed for medium power switching and phase cont rol applications. the glass passivation technology used has reliable operation up to 125 c junction temperature. product summary package to-220ab fp diode variation single scr i t(av) 16 a v drm /v rrm 800 v, 1200 v v tm 1.25 v i gt 45 ma t j - 40 c to 125 c ( g ) 3 2 (a) 1 (k) to-220ab full-pak 1 2 3 available output current in typical applications applications single-phase bridge th ree-phase bridge units capacitive input filter t a = 55 c, t j = 125 c, ? common heatsink of 1 c/w 18 22 a major ratings and characteristics parameter test conditions values units i t(av) sinusoidal wa v eform 16 a i rms 25 v rrm /v drm 800/1200 v i tsm 350 a v t 16 a, t j = 25 c 1.25 v dv/dt 500 v/s di/dt 150 a/s t j - 40 to 125 c voltage ratings part number v rrm , maximum peak reverse voltage v v drm , maximum peak direct voltage v i rrm /i drm at 125 c ma vs-25tts08fpp b f, vs-25tts08fp-m3 800 800 10 vs-25tts12fpp b f, VS-25TTS12FP-M3 1200 1200
vs-25tts..fppbf series, vs-25tts..fp-m3 series www.vishay.com vishay semiconductors revision: 26-jul-13 2 document number: 94384 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 absolute maximum ratings parameter symbol test conditions values units typ. max. maximum a v erage on-state current i t(av) t c = 51 c, 180 conduction half sine wave 16 a maximum rms on-state current i rms 25 maximum peak, one-cycle, ? non-repetiti v e surge current i tsm 10 ms sine pulse, rated v rrm applied 300 10 ms sine pulse, no v oltage reapplied 350 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 450 a 2 s 10 ms sine pulse, no v oltage reapplied 630 maximum i 2 ? t for fusing i 2 ? t t = 0.1ms to 10 ms, no v oltage reapplied 6300 a 2 ? s maximum on-state v oltage drop v tm 16 a, t j = 25 c 1.25 v on-state slope resistance r t t j = 125 c 12.0 m ? threshold v oltage v t(to) 1.0 v maximum re v erse and direct leakage current i rm /i dm t j = 25 c v r = rated v rrm /v drm 0.5 ma t j = 125 c 10 holding current i h anode supply = 6 v, resistive load, initial i t = 1 a, ? t j = 25 c - 150 maximum latching current i l anode supply = 6 v, resisti v e load, t j = 25 c 200 maximum rate of rise of off-state v oltage dv/dt t j = t j max., linear to 80 %, v drm = r g - k = open 500 v/s maximum rate of rise of turned-on current di/dt 150 a/s triggering parameter symbol test conditions values units maximum peak gate power p gm 8.0 w maximum a v erage gate power p g(av) 2.0 maximum peak positi v e gate current + i gm 1.5 a maximum peak negati v e gate v oltage - v gm 10 v maximum required dc gate current to trigger i gt anode supply = 6 v, resistive load, t j = - 10 c 60 ma anode supply = 6 v, resistive load, t j = 25 c 45 anode supply = 6 v, resistive load, t j = 125 c 20 maximum required dc gate ? v oltage to trigger v gt anode supply = 6 v, resistive load, t j = - 10 c 2.5 v anode supply = 6 v, resistive load, t j = 25 c 2.0 anode supply = 6 v, resistive load, t j = 125 c 1.0 maximum dc gate v oltage not to trigger v gd t j = 125 c, v drm = rated value 0.25 maximum dc gate current not to trigger i gd 2.0 ma switching parameter symbol test conditions values units typical turn-on time t gt t j = 25 c 0.9 s typical re v erse reco v ery time t rr t j = 125 c 4 typical turn-off time t q 110
vs-25tts..fppbf series, vs-25tts..fp-m3 series www.vishay.com vishay semiconductors revision: 26-jul-13 3 document number: 94384 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - on-state powe r loss characteristics fig. 4 - on-state powe r loss characteristics thermal and mechanical specifications parameter symbol test conditions values units maximum junction and storage ? temperature range t j , t stg - 40 to 125 c maximum thermal resistance, ? junction to case r thjc dc operation 2.5 c/w maximum thermal resistance, ? junction to am b ient r thja 62 typical thermal resistance, ? case to heatsink r thcs mounting surface, smooth and greased 0.5 approximate weight 2g 0.07 oz. mounting torque minimum 6 (5) kgf cm (l b f in) maximum 12 (10) marking de v ice case style to-220ab full-pak (94/v0) 25tts08fp 25tts12fp 0 5 10 15 20 0 20 40 60 80 100 120 140 30 25tt s .. s erie s 60 90 180 120 average on- s tate current (a) maximum allowable ca s e temperature (c) 0 5 10 15 20 25 30 0 20 40 60 80 100 120 140 30 25tt s .. s erie s 60 180 dc 120 90 average on- s tate current (a) maximum allowable ca s e temperature (c) 0 5 10 15 20 25 048121620 rm s li m i t conduction angle maximum average on-state power loss (w) average on-state current (a) 180 120 90 60 30 25tt s. . se r i e s t = 125c j 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 dc 180 120 90 60 30 rm s li m i t conduction period maximum average on-state power loss (w) avera ge on-sta te current (a) 2 5 tts. . se r i e s t = 125c j
vs-25tts..fppbf series, vs-25tts..fp-m3 series www.vishay.com vishay semiconductors revision: 26-jul-13 4 document number: 94384 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum non-repetitive surge current fig. 6 - maximu m non-repetitive surge current fig. 7 - on-state volt age drop characteristics fig. 8 - thermal impedance z thjc characteristics 150 200 250 300 350 110100 number of equal amplitude half cycle current pulses (n) pe a k ha l f s ine wave on-state current (a) init ia l t = 125c @ 6 0 h z 0 . 0 0 8 3 s @ 5 0 h z 0 . 0 1 0 0 s j 25tt s. . se r i e s at any rated load condition and with rated v applied following surge. rrm 100 150 200 250 300 350 400 0.01 0.1 1 pe a k ha lf s ine wa ve on-state current (a) pu l se tr a i n d u ra t i o n ( s) maximum non repetitive surge current versus pulse train duration. control of conduc tion may not be maintained. initia l t = 125c no voltage reapplied ra t e d v re a p p l i e d rrm j 25tts.. se rie s 1 10 100 1000 012345 t = 2 5 c j instantaneous on-state current (a) insta nta neous on-sta te vo lta g e (v) t = 1 2 5 c j 25tts .. series sq uare wave pul s e duration ( s ) thermal impedance zthjc (c/w) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 0.01 0.1 1 10 s ingle pul s e (thermal re s i s tance) d = 0.02 d = 0.05 d = 0.1 d = 0.2 d = 0.5 d = 0.01
vs-25tts..fppbf series, vs-25tts..fp-m3 series www.vishay.com vishay semiconductors revision: 26-jul-13 5 document number: 94384 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - gate characteristics ordering information table 0.1 1 10 100 0.001 0.01 0.1 1 10 100 (b) (a) rectangular gate pulse (4) (3) (2) (1) insta nta ne o us ga te current (a) insta nta ne o us g a te volta g e (v) tj = 2 5 c t j = 125 c b)recommended load line for frequenc y limited by pg(av) a)recommended load line for rated di/dt: 10 v, 20 ohms tr = 0.5 s, tp >= 6 s tj = - 1 0 c 25tts.. serie s ig d vg d <= 30% rated di/ dt: 10 v, 65 ohms tr = 1 s, tp >= 6 s (1) pgm = 40 w, t p = 1 m s (2) pgm = 20 w, t p = 2 m s (3) pgm = 8 w, tp = 5 ms (4) pgm = 4 w, tp = 10 ms ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-25tts08fppbf 50 1000 anti static plastic tubes vs-25tts08fp-m3 50 1000 anti static plastic tubes vs-25tts12fppbf 50 1000 anti static plastic tubes VS-25TTS12FP-M3 50 1000 anti static plastic tubes links to related documents dimensions www.vishay.com/doc?95072 part marking information to-220fp pbf www.vishay.com/doc?95069 to-220fp -m3 www.vishay.com/doc?95456 2 - current rating (25 = 25 a) 3 - circuit configuration: 4 - package: 5 t = single thyristor - type of silicon: 6 - voltage code x 100 = v rrm t = to-220ab standard recovery rectifier 7 - full-pak 8 08 = 800 v 12 = 1200 v device code 6 2 4 3 5 7 8 25 t t s 12 fp pbf 1 1 - vishay semiconductors product - environmental digit: pbf = lead (pb)-free and rohs compliant -m3 = halogen-free, rohs compliant, and terminations lead (pb)-free v s -
outline dimensions www.vishay.com vishay semiconductors revision: 20-jul-11 1 document number: 95072 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters 5 0.5 5 0.5 0.9 0.7 1.15 1.05 2.54 typ. 2.54 typ. 2.8 2.6 1.4 1.3 typ. 10 16.4 15.4 16.0 15.8 13.56 13.05 0.61 0.38 2.85 2.65 3.7 3.2 4.8 4.6 3.3 3.1 7.31 6.91 10.6 10.4 hole ? 3.4 3.1 (2 places) r 0.7 r 0.5 lead assignments diode s 1. - anode/open 2. - cathode 3. - anode conforms to jedec outline to-220 full-pak
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